Collection HAL du CRHEA - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Traps Silicium Coalescence Bond order wave CVD Bending Optical properties Electrical properties and parameters Microscopie électronique en transmission Free-standing GaN Graphene ZnO Atomic force microscopy GaN-on-Si Doping Molecular beam epitaxy MBE Schottky barrier diode 6H-SiC Normally-off AlN Epitaxy Metalens Gallium nitride High electron mobility transistor HEMT Aluminum gallium nitride III-N HEMT LPCVD Silica Characterization III-nitride semiconductors Strong coupling AlGaN/GaN HEMT Tunnel junction Croissance Semiconducteurs Nitrides Bullseye antennas Silicon Al Quantum dots Chemical vapor deposition processes Zinc oxide Light emitting diodes MBE Dislocations Épitaxie Chemical vapor deposition High electron mobility transistors Compressive stress DLTFS Spectroscopy AlGaN/GaN Gallium nitride GaN Transistor Aluminum nitride Electron holography MOCVD 2D materials Boîtes quantiques Nitrures d'éléments III Selective area growth Nanoparticles Cathodoluminescence Boron nitride Group III-nitrides Microcavity AlGaN Silicon carbide Creep High electron mobility transistor Millimeter-wave power density Nanowire Semiconductors Excitons GaN HEMT CRYSTALS Nitrure de gallium Quantum wells III-nitrides Molecular beam epitaxy Épitaxie par jets moléculaires Photoluminescence Nanostructures Transmission electron microscopy Caractérisation LED Holography Diodes électroluminescentes Heterostructures Diffraction Contraintes LEDs GaN Defects Metasurfaces Atom probe tomography 3C–SiC Metasurface InGaN