Ce1−xNdxO2−δ/Si thin films obtained by pulsed laser deposition: Microstructure and conduction properties

Christine Leroux; M. Chmielowska; S. Villain; A. Kopia; J. Dallas; J. Kusinski; J.R. Gavarri; Ch. Leroux

Ce1−xNdxO2−δ/Si thin films obtained by pulsed laser deposition: Microstructure and conduction properties

Christine Leroux ¹ M. Chmielowska ² S. Villain ¹ A. Kopia J. Dallas J. Kusinski ³ J.R. Gavarri Ch. Leroux ¹

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

3 AGH UST - AGH University of Science and Technology [Krakow, PL]

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadatas

https://hal-univ-tln.archives-ouvertes.fr/hal-01727398
Contributor : Christine Leroux <>
Submitted on : Friday, March 9, 2018 - 10:40:01 AM
Last modification on : Thursday, October 4, 2018 - 10:12:02 PM

Ce1−xNdxO2−δ/Si thin films obtained by pulsed laser deposition: Microstructure and conduction properties

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Ce1−xNdxO2−δ/Si thin films obtained by pulsed laser deposition: Microstructure and conduction properties

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