Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

Abstract : High aspect ratio, rod-like and single crystal phase GaAs nanowires (NWs) were grown by gold catalyst-assisted hydride vapor phase epitaxy (HVPE). High resolution transmission electron mi-croscopy and micro-Raman spectroscopy revealed polytypism-free zinc blende (ZB) NWs over lengths of several tens of micrometers for a mean diameter of 50 nm. Micro-photoluminescence studies of individual NWs showed linewidths smaller than those reported elsewhere which is consistent with the crystalline quality of the NWs. HVPE makes use of chloride growth precursors GaCl of which high decomposition frequency after adsorption onto the liquid droplet catalysts, favors a direct and rapid introduction of the Ga atoms from the vapor phase into the droplets. High influxes of Ga and As species then yield high axial growth rate of more than 100 μm/h. The diffusion of the Ga atoms in the liquid droplet towards the interface between the liquid and the solid nanowire was investigated by using density functional theory calculations. The diffusion coefficient of Ga atoms was estimated to be 3 × 10 −9 m 2 /s. The fast diffusion of Ga in the droplet favors nucleation at the liquid-solid line interface at the center of the NW. This is further evidence, provided by an alternative epitaxial method with respect to metal-organic vapor phase epitaxy and molecular beam epitaxy, of the current assumption which states that this type of nucleation should always lead to the formation of the ZB cubic phase.
Complete list of metadatas

Cited literature [46 references]  Display  Hide  Download

https://hal-univ-tln.archives-ouvertes.fr/hal-01727422
Contributor : Christine Leroux <>
Submitted on : Thursday, December 20, 2018 - 4:02:56 PM
Last modification on : Wednesday, March 27, 2019 - 4:18:02 PM
Long-term archiving on : Friday, March 22, 2019 - 9:36:41 AM

File

UQ629279_OA.pdf
Publication funded by an institution

Licence


Distributed under a Creative Commons Attribution - NonCommercial 4.0 International License

Identifiers

Citation

Yamina Andre, Kaddour Lekhal, Philip Hoggan, Geoffrey Avit, Fabian Cadiz, et al.. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation. Journal of Chemical Physics, American Institute of Physics, 2014, 140 (19), ⟨10.1063/1.4874875⟩. ⟨hal-01727422⟩

Share

Metrics

Record views

297

Files downloads

122