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Article Dans Une Revue MRS Online Proceedings Library Année : 2009

Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices

Résumé

We present a one-dimensional simulation study of the capacitance-voltage (C-V) and current-voltage (I-V) characteristics in MOS devices with high mobility semiconductors (Ge and III-V materials) and non-conventional gate stack with high-κ dielectrics. The C-V quantum simulation code self-consistently solves the Schrödinger and Poisson equations and the electron transport through the gate stack is computed using the non-equilibrium Green's function formalism (NEGF). Simulated C-V characteristics are successfully confronted to experimental data for various MOS structures with different semiconductors and dielectric stacks. Simulation of I-V characteristics reveals that gate leakage current strongly depends on gate stacks and substrate materials and predicts low leakage current for future CMOS devices with high mobility materials and high-κ dielectrics.
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Dates et versions

hal-01745840 , version 1 (16-07-2018)

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Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran, Florence Bellenger, Jérome Mitard, et al.. Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices. MRS Online Proceedings Library, 2009, 1194, pp.1194-A02-02. ⟨10.1557/PROC-1194-A02-02⟩. ⟨hal-01745840⟩
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