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Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate
Jash Mehta
,
Idriss Abid
,
Julien Bassaler
,
Julien Pernot
,
Philippe Ferrandis
,
et al.
Compound Semiconductor Week, CSW 2022, Jun 2022, Ann Arbor, MI, United States. 2 p
Communication dans un congrès
hal-03828829v1
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Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy
Eduardo Esmanhotto
,
Tifenn Hirtzlin
,
Djohan Bonnet
,
Niccolo Castellani
,
Jean-Michel Portal
,
et al.
Article dans une revue
hal-03861116v1
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Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template
Julien Bassaler
,
Rémi Comyn
,
C. Bougerol
,
Yvon Cordier
,
F Medjdoub
,
et al.
WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
Communication dans un congrès
hal-03681788v1
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Voltage-dependent synaptic plasticity: Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential
Nikhil Garg
,
Ismael Balafrej
,
Terrence Stewart
,
Jean-Michel Portal
,
Marc Bocquet
,
et al.
Article dans une revue
hal-03834905v1
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A Multimode Hybrid Memristor-CMOS Prototyping Platform Supporting Digital and Analog Projects
Kamel-Eddine Harabi
,
C. Turck
,
Marie Drouhin
,
A. Renaudineau
,
T. Bersani-Veroni
,
et al.
2023 28th Asia and South Pacific Design Automation Conference (ASP-DAC), Jan 2023, Tokyo (Japan), France. pp.184-185, ⟨10.1145/3566097.3567944⟩
Communication dans un congrès
hal-04270420v1
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Oxygen and hydrogen sorption in thermally activated yttrium-based getter thin films for MEMS vacuum packaging
Charlotte Kutyla
,
Sylvain Lemettre
,
Clément Bessouet
,
Alain Bosseboeuf
,
Philippe Coste
,
et al.
Article dans une revue
hal-03836081v1
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Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell
Fadi Jebali
,
Atreya Majumdar
,
Clément Turck
,
Kamel-Eddine Harabi
,
Mathieu-Coumba Faye
,
et al.
Article dans une revue
hal-04442577v1
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Comparing Fractional Quantum Hall Laughlin and Jain Topological Orders with the Anyon Collider
Mélanie Ruelle
,
Elric Frigerio
,
Jean-Marc Berroir
,
Bernard Plaçais
,
Jérôme Rech
,
et al.
Article dans une revue
hal-04028619v2
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High Al-content AlGaN channel high electron mobility transistors on silicon substrate
Jash Mehta
,
Idriss Abid
,
Julien Bassaler
,
Julien Pernot
,
Philippe Ferrandis
,
et al.
Article dans une revue
hal-03952273v1
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Binary ReRAM-based BNN first-layer implementation
Mona Ezzadeen
,
Atreya Majumdar
,
Sigrid Thomas
,
Jean-Philippe Noël
,
Bastien Giraud
,
et al.
Communication dans un congrès
hal-04270562v1
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Synthesis of Nano-Oxide Precipitates by Implantation of Ti, Y and O Ions in Fe-10%Cr: Towards an Understanding of Precipitation in Oxide Dispersion-Strengthened (ODS) Steels
Stéphanie Jublot-Leclerc
,
Martin Owusu-Mensah
,
Vladimir A. Borodin
,
Joël Ribis
,
Ludovic Largeau
,
et al.
Article dans une revue
hal-03758429v1
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A Memristor-Based Bayesian Machine
Kamel-Eddine Harabi
,
Tifenn Hirtzlin
,
Clément Turck
,
Elisa Vianello
,
Raphaël Laurent
,
et al.
Article dans une revue
hal-03861134v1
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Electrical and ion beam analyses of Yttrium and Yttrium-Titanium getter thin films oxidation
Clément Bessouet
,
Sylvain Lemettre
,
Charlotte Kutyla
,
Alain Bosseboeuf
,
Philippe Coste
,
et al.
Article dans une revue
hal-03398744v1
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Experimental Demonstration of Memristor Delay-Based Logic In-Memory Ternary Neural Network
A. Renaudineau
,
K.-E. Harabi
,
C. Turck
,
A. Laborieux
,
E. Vianello
,
et al.
Communication dans un congrès
hal-04270396v1
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Embedded measurement of the SET switching time of RRAM memory cells
F. Jebali
,
E. Muhr
,
M. Alayan
,
M.C. Faye
,
D. Querlioz
,
et al.
Communication dans un congrès
hal-03971049v1
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